基于藍寶石襯底的三角形單層二硫化鉬

簡要描述：Isolated monolayer thickness MoS2 are grown onto c-cut （0001） sapphire substrates.

產品型號：
廠商性質：生產廠家
更新時間：2025-05-08
訪問量：1428

產品分類

二維材料

其他二維材料二維材料粉末二維材料溶液碲化物晶體硒化物晶體硫化物晶體絕緣體鈣鈦礦異質結 MOFS材料二維材料薄膜黑磷六方氮化硼查看全部產品

詳細介紹

Isolated monolayer thickness MoS2 are grown onto c-cut (0001) sapphire substrates. This particular product contains monolayer thickness MoS2 triangular flakes randomly distributed across sapphire substrate. While some regions reach continuity with coalesced MoS2 triangles, this sample contains well-separated triangles for advanced spectroscopy, microscopy, and electronic measurements. Synthesized monolayer MoS2 triangles are highly luminescent and Raman spectroscopy studies also confirm the monolayer thickness.

Sample Properties.

Sample size	1cm x 1cm square shaped
Substrate type	(0001) c-cut sapphire
Coverage	Isolated and Partially Merged Monolayer Triangles
Electrical properties	1.85 eV Direct Bandgap Semiconductor
Crystal structure	Hexagonal Phase
Unit cell parameters	a = b = 0.313 nm, c = 1.230 nm, α = β = 90°, γ = 120°
Production method	Atmospheric Pressure Chemical Vapor Deposition (APCVD)
Characterization methods	Raman, photoluminescence, TEM, EDS

Specifications

1) Well-separated MoS2 domains across c-cut sapphire

2) One centimeter in size. Larger sizes up to 2-inch wafer-scale available upon requests.

3) Atomically smooth surface with roughness < 0.15 nm.

4) Highly uniform surface morphology. MoS2 triangles are scattered across sample

5) 99.9995% purity as determined by nano-SIMS measurements

6) Repeatable Raman and photoluminescence response

7) High crystalline quality, Raman response, and photoluminescence emission comparable to single crystalline monolayer flakes.

8) c-cut Sapphire but our research and development team can transfer MoS2 triangles onto variety of substrates including PET, quartz, and SiO2/Si without significant compromising of material quality.

9) Defect profile. MoS2 monolayer triangles do not contain intentional dopants or defects. However, our technical staff can produce defected MoS2 using α-bombardment technique.

Supporting datasets [for Monolayer MoS2 Triangles on c-cut Sapphire]

Transmission electron images (TEM) acquired from CVD grown MoS2 isolated triangles on c-cut sapphire confirming highly crystalline nature of monolayers

Energy dispersive X-ray spectroscopy (EDX) characterization on CVD grown MoS2 isolated triangles on c-cut sapphire confirming Mo:S 1:2 ratios

Room temperature photoluminescence spectroscopy (PL) and Raman spectroscopy (Raman) measurements performed on CVD grown MoS2 isolated triangles on c-cut sapphire. Raman spectroscopy measurement confirm monolayer nature of the CVD grown samples and PL spectrum display sharp and bright PL peak located at 1.85 eV in agreement with the literature.

產品咨詢

留言框

產品：
您的單位：
您的姓名：
聯(lián)系電話：
常用郵箱：
省份：
詳細地址：
補充說明：
驗證碼：

請輸入計算結果（填寫阿拉伯數(shù)字），如：三加四=7

上一篇：基于二氧化硅襯底的三角形單層二硫化鉬
下一篇：基于藍寶石襯底的全區(qū)域覆蓋的少層二硒化鉑

基于藍寶石襯底的三角形單層二硫化鉬

留言框

產品：

您的單位：

您的姓名：

聯(lián)系電話：

常用郵箱：

省份：

詳細地址：

補充說明：

驗證碼：